HG 2s1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.

Features:

• High Power Gain:  G_pe >/= 12dB (V_CC =
  12V, P_O= 16W, f = 27MHz)
• Ability to Withstand Infinite VSWR Load when Operated
  at:
  V_CC = 16V, P_O
  = 20W, f = 27MHz

Application:

• 10 to 14 Watt Output Power Class AB Amplifier Applications in HF
  Band