HG 2SC1969
HG 2s1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.
Features:
High Power Gain: Gpe >/= 12dB (VCC =
12V, PO= 16W, f = 27MHz)Ability to Withstand Infinite VSWR Load when Operated
at:
VCC = 16V, PO
= 20W, f = 27MHz
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF
Band
HG 2s1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.
Features:
High Power Gain: Gpe >/= 12dB (VCC =
12V, PO= 16W, f = 27MHz)Ability to Withstand Infinite VSWR Load when Operated
at:
VCC = 16V, PO
= 20W, f = 27MHz
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF
Band
HG 2s1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.
Features:
High Power Gain: Gpe >/= 12dB (VCC =
12V, PO= 16W, f = 27MHz)Ability to Withstand Infinite VSWR Load when Operated
at:
VCC = 16V, PO
= 20W, f = 27MHz
Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF
Band
