HG 2SC2510

$40.00

HFE’s many vary with this product

HG RF POWER TRANSISTOR 2SC2510

Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)

Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)

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HFE’s many vary with this product

HG RF POWER TRANSISTOR 2SC2510

Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)

Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)

HFE’s many vary with this product

HG RF POWER TRANSISTOR 2SC2510

Semiconductors HG ROHS Compliance,
Silicon NPN POWER TRANSISTOR
Specified 28V,
28MHz Characteristics Output Power : Po = 150WPEP (Min.)
Power Gain : Gp = 12.2dB (Min.)

Collector Efficiency η = 35% (Min.) : C _30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)